SI3477DV-T1-GE3 Vishay

P-Ch MOSFET TSOP-6 12V 17.5mohm @ 4.5V

SI3477DV-T1-GE3

Manufacturer Part Number

SI3477DV-T1-GE3

Description

P-Ch MOSFET TSOP-6 12V 17.5mohm @ 4.5V

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI3477DV-T1-GE3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

17.5 mOhm @ 9A, 4.5V

Drain To Source Voltage (vdss)

12V

Current - Continuous Drain (id) @ 25° C

8A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

90nC @ 10V

Input Capacitance (ciss) @ Vds

2600pF @ 6V

Power - Max

4.2W

Mounting Type

Surface Mount

Package / Case

6-TSOP (0.063", 1.60mm Width)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.014 Ohms

Forward Transconductance Gfs (max / Min)

30 S

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

10 V

Continuous Drain Current

- 8 A

Power Dissipation

4.2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

58 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI3477DV-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI3477DV-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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