SI4128DY-T1-GE3 Vishay, SI4128DY-T1-GE3 Datasheet

N-CHANNEL 30-V (D-S) MOSFET

SI4128DY-T1-GE3

Manufacturer Part Number
SI4128DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI4128DY-T1-GE3

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4128DY-T1-GE3
Manufacturer:
Renesas
Quantity:
276
Part Number:
SI4128DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI4128DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
C
30
= 25 °C.
(V)
S
S
G
S
0.030 at V
0.024 at V
Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
GS
Top View
GS
SO-8
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
b, d
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
10.9
D
D
D
D
9.7
(A)
Steady State
a
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
3.8 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Available
Notebook PC
- System Power
- Load Switch
Typical
g
42
19
Tested
®
G
Power MOSFET
N-Channel MOSFET
- 55 to 150
7.5
2.4
1.5
Limit
± 20
10.9
6
2
S
8.7
4.2
3.2
D
30
30
b, c
b, c
5
b, c
b, c
b, c
Maximum
53
25
Vishay Siliconix
Si4128DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4128DY-T1-GE3

SI4128DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free) Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4128DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-83089-Rev. C, 29-Dec-08 New Product 2.0 2.5 3.0 600 500 400 300 200 100 1.8 1.6 1 1.2 1.0 0.8 0 Si4128DY Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si4128DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.9 1.8 1 250 µA D 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.08 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69004 S-83089-Rev. C, 29-Dec-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4128DY Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si4128DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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