SI4166DY-T1-GE3 Vishay, SI4166DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4166DY-T1-GE3
• Description: N-CHANNEL 30V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4166DY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 65 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
35
28
21
14
7
0
0
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
2.0
1.6
1.2
0.8
0.4
0.0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
100
8.0
6.4
4.8
3.2
1.6
0.0
0
125
25
Power Derating, Junction-to-Foot
150
T
C
50
- Case Temperature (°C)
75
Vishay Siliconix
100
Si4166DY
www.vishay.com
125
150
5