SI4172DY-T1-GE3 Vishay, SI4172DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4172DY-T1-GE3
• Description: N-CHANNEL 30V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4172DY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 52 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
0.015
0.013
0.011
0.009
0.007
0.005
10
50
40
30
20
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 11 A
V
V
GS
V
GS
GS
10
2
= 10 V
V
= 4.5 V
= 10 thru 4 V
DS
Output Characteristics
4
Q
- Drain-to-Source Voltage (V)
g
I
V
D
- Total Gate Charge (nC)
DS
- Drain Current (A)
Gate Charge
20
4
= 15 V
8
30
6
V
DS
V
= 24 V
GS
12
40
= 3 V
8
10
50
16
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
0.5
= 11 A
6
V
V
DS
T
Transfer Characteristics
GS
0
J
C
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
iss
oss
Capacitance
25
12
T
C
V
1.5
= 125 °C
50
GS
T
Vishay Siliconix
C
T
= 10 V
C
18
= 25 °C
75
= - 55 °C
V
2.0
GS
Si4172DY
= 4.5 V
100
www.vishay.com
24
2.5
125
3.0
150
30
3