SI4172DY-T1-GE3 Vishay, SI4172DY-T1-GE3 Datasheet - Page 3
![N-CHANNEL 30V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4172DY-T1-GE3
Manufacturer Part Number
SI4172DY-T1-GE3
Description
N-CHANNEL 30V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4172DY-T1-GE3.pdf
(7 pages)
Specifications of SI4172DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
52 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4172DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI4172DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
0.015
0.013
0.011
0.009
0.007
0.005
10
50
40
30
20
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 11 A
V
V
GS
V
GS
GS
10
2
= 10 V
V
= 4.5 V
= 10 thru 4 V
DS
Output Characteristics
4
Q
- Drain-to-Source Voltage (V)
g
I
V
D
- Total Gate Charge (nC)
DS
- Drain Current (A)
Gate Charge
20
4
= 15 V
8
30
6
V
DS
V
= 24 V
GS
12
40
= 3 V
8
10
50
16
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
0.5
= 11 A
6
V
V
DS
T
Transfer Characteristics
GS
0
J
C
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
iss
oss
Capacitance
25
12
T
C
V
1.5
= 125 °C
50
GS
T
Vishay Siliconix
C
T
= 10 V
C
18
= 25 °C
75
= - 55 °C
V
2.0
GS
Si4172DY
= 4.5 V
100
www.vishay.com
24
2.5
125
3.0
150
30
3