SI4324DY-T1-E3 Vishay, SI4324DY-T1-E3 Datasheet
SI4324DY-T1-E3
Manufacturer Part Number
SI4324DY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,36A I(D),SO
Manufacturer
Vishay
Specifications of SI4324DY-T1-E3
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0032 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4324DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
Ordering Information: Si4324DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
G
= 25 °C.
S
S
S
0.0042 at V
0.0032 at V
Si4324DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
Top View
GS
GS
SO-8
J
(Ω)
= 150 °C)
= 4.5 V
b, d
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
D
D
D
D
36
29
(A)
Steady State
a
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
25.5 nC
g
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Synchronous Buck-Low Side
• Synchronous Rectifier-POL
Available
- Notebook
- Server
- Workstation
Typical
29
13
g
Tested
®
Power MOSFET
- 55 to 150
3.0
3.5
2.2
Limit
24
19
± 20
7.0
7.8
5.0
30
36
29
70
40
80
b, c
b, c
b, c
b, c
b, c
Maximum
35
16
G
Vishay Siliconix
N-Channel MOSFET
Si4324DY
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
1
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