SI4438DY-T1-E3 Vishay, SI4438DY-T1-E3 Datasheet

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... Top View Ordering Information: Si4438DY-T1-E3 (Lead (Pb)-free) Si4438DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si4438DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

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... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 73581 S09-0228-Rev. B, 09-Feb-09 1.5 2.0 2 Si4438DY Vishay Siliconix 1.2 1.0 0.8 0.6 25 °C 0 125 ° °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 6200 4960 3720 2480 C oss 1240 C rss 0 0 ...

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... Si4438DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100.000 10.000 T = 150 °C J 1.000 0.100 0.010 0.001 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µA ...

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... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4438DY Vishay Siliconix 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com ...

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... Si4438DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

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