SI4453DY-T1-E3 Vishay, SI4453DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4453DY-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,10A I(D),SO
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
0.015
0.012
0.009
0.006
0.003
0.000
0.1
30
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 14 A
T
On-Resistance vs. Drain Current
= 6 V
0.2
J
26
8
= 150 °C
V
SD
Q
V
g
GS
I
- Source-to-Drain Voltage (V)
D
- Total Gate Charge (nC)
0.4
= 1.8 V
- Drain Current (A)
Gate Charge
16
52
0.6
24
78
V
V
T
0.8
GS
GS
J
= 25 °C
= 2.5 V
= 4.5 V
104
32
1.0
130
40
1.2
12000
10000
0.030
0.024
0.018
0.012
0.006
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 14 A
C
2
= 4.5 V
1.6
rss
T
V
0
V
J
DS
GS
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
iss
25
Capacitance
3.2
C
oss
I
D
50
Vishay Siliconix
= 14 A
6
4.8
75
Si4453DY
8
www.vishay.com
100
6.4
10
125
150
8.0
12
3