SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 2

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SI4622DY-T1-E3

Manufacturer Part Number
SI4622DY-T1-E3
Description
DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
Manufacturer
Vishay
Datasheets

Specifications of SI4622DY-T1-E3

Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A, 6.7 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4622DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 921
Part Number:
SI4622DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4622DY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
iss
rss
gd
fs
gs
g
g
/T
/T
J
J
New Product
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
= 30 V, V
= 30 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
DS
DS
= 0 V, V
= 0 V, V
= 0 V, I
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 30 V, V
= 30 V, V
≥ 5 V, V
= V
= V
≥ 5 V, V
= 10 V, I
= 10 V, I
= 15 V, I
= 15 V, I
I
I
D
D
Channel-1
Channel-2
Channel-1
Channel-2
f = 1 MHz
Test Conditions
GS
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
= 0 V, T
= 0 V, T
= 4.5 V, I
= 4.5 V, I
, I
, I
= 10 V, I
= 10 V, I
D
D
GS
GS
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
GS
GS
D
D
D
D
D
D
= 250 µA
= 250 µA
D
D
GS
GS
= 1 mA
= 1 mA
= ± 20 V
= ± 16 V
= 9.6 A
= 6.7 A
= 9.6 A
= 6.7 A
= 8.9 A
= 6.4 A
= 10 V
= 10 V
= 0 V
= 0 V
J
J
D
D
D
D
= 100 °C
= 100 °C
= 9.6 A
= 6.7 A
= 9.6 A
= 6.7 A
Ch-1
Ch-2
Ch-2
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
0.26
0.62
1.5
30
30
25
20
1
S-81442-Rev. A, 23-Jun-08
Document Number: 68695
0.0132 0.0160
0.0155 0.0186
0.0240 0.0290
0.022
2458
Typ.
- 4.7
0.04
13.2
760
385
110
150
4.4
2.1
1.4
1.3
3.1
33
94
10
50
40
19
6
8
6
0.0264
Max.
100
100
2.5
2.2
0.2
2.6
6.2
44
60
20
29
12
1
5
mV/°C
Unit
mA
mA
nA
µA
µA
nC
pF
Ω
Ω
V
V
A
S

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