SI4632DY-T1-E3 Vishay, SI4632DY-T1-E3 Datasheet - Page 4

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SI4632DY-T1-E3

Manufacturer Part Number
SI4632DY-T1-E3
Description
N-CHANNEL 25-V (D-S) MOSFET
Manufacturer
Vishay
Series
WFET®r
Datasheet

Specifications of SI4632DY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
2.6V @ 250µA
Gate Charge (qg) @ Vgs
161nC @ 10V
Input Capacitance (ciss) @ Vds
11175pF @ 15V
Power - Max
7.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0027 Ohms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
27 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4632DY-T1-E3TR
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
100.000
10.000
1.000
0.010
0.100
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.5
0.2
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
Limited by R
0.6
50
I
D
= 250 µA
75
25 °C
0.8
0.01
100
A
0.1
DS(on)
I
10
D
1
100
= 25 °C, unless otherwise noted
0.1
= 5 mA
* V
*
Safe Operating Area, Junction-to-Ambient
1.0
GS
125
Single Pulse
T
A
minimum V
= 25 °C
1.2
V
150
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
10
DS(on)
0.030
0.024
0.018
0.012
0.006
0.000
200
160
120
80
40
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
10 s
1 ms
DC
1 s
1
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
3
25 °C
4
125 °C
Time (s)
S09-0228-Rev. B, 09-Feb-09
5
0.1
Document Number: 73786
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