SI4646DY-T1-E3 Vishay, SI4646DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4646DY-T1-E3
• Description: N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4646DY-T1-E3

• Lead Free Status / Rohs Status: Details

Si4646DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
10
10
10
10
10
0.01
10
100
0.1
10
-2
-6
-3
-4
-5
-1
1
0.0
0
T
J
Source-Drain Diode Forward Voltage
= 150 °C
0.2
25
Reverse Current (Schottky)
V
SD
T
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
0.4
50
30 V
10 V
0.6
75
T
J
0.01
= 25 °C
100
0.1
10
20 V
100
1
0.8
0.1
* V
Single Pulse
T
A
Limited by R
GS
125
1.0
= 25 °C
> minimum V
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area
150
1.2
1
DS(on)
GS
*
at which R
BVDSS
Limited
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
150
120
is specified
90
60
30
0
0
1 ms
10 ms
100 ms
1 s
10 s
0 .
DC
0
0
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S09-0868-Rev. B, 18-May-09
T
T
Document Number: 68762
J
J
= 25 °C
= 125 °C
6
I
D
1
= 10 A
8
10
1
0