SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet - Page 6
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SI4866BDY-T1-E3
Manufacturer Part Number
SI4866BDY-T1-E3
Description
N-CHANNEL 12-V (D-S) MOSFET
Manufacturer
Vishay
Specifications of SI4866BDY-T1-E3
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0053 Ohms
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4866BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
www.vishay.com/ppg?70341.
10
10
-4
-4
0.05
0.2
0.1
0.02
Duty Cycle = 0.5
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
1
S09-0540-Rev. B, 06-Apr-09
= P
t
2
Document Number: 70341
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 90 °C/W
1000
1
0