SI4866DY-T1 Vishay
SI4866DY-T1
Manufacturer Part Number
SI4866DY-T1
Description
N-CH REDUCED Qg, FAST SWITCHING MOSF
Manufacturer
Vishay
Specifications of SI4866DY-T1
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
17 A
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Gate Charge Qg
21 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866DY-T1
Manufacturer:
ROHM
Quantity:
1 910
Part Number:
SI4866DY-T1
Manufacturer:
SI
Quantity:
20 000
Company:
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000