SI4920DY-T1 Vishay, SI4920DY-T1 Datasheet

SI4920DY-T1

Manufacturer Part Number

SI4920DY-T1

Description

TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,6.9A I(D),SO

Manufacturer

Vishay

Datasheet

1.SI4920DY-T1.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4920DY-T1-E3

Manufacturer:

VISHAY

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Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4920DY-T1-E3

Manufacturer:

VISHAY/威世

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Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4920DY-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 70667

S-52637—Rev. D, 02-Jan-06

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Surface Mounted on FR4 Board, t v 10 sec.

Ordering Information: Si4920DY–T1

(V)

0.035 at V

0.025 at V

= 150 _C)

Top View

Si4920DY–T1–E3 (Lead (Pb)–free)

SO-8

DS(on)

Dual N-Channel 30-V (D-S) MOSFET

Parameter

(W)

= 4.5 V

= 10 V

"6.9

"5.8

(A)

= 25 _C

= 70 _C

= 25 _C

= 70 _C

N-Channel MOSFET

Symbol

D TrenchFETr Power MOSFETs

D 100 % Rg tested

, T

thJA

stg

– 55 to 150

Limit

Vishay Siliconix

"6.9

" 5.5

" 20

" 40

62.5

1.7

1.3

N-Channel MOSFET

Si4920DY

www.vishay.com

Unit

_C/W

2-1

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