SI4933DY-T1-E3 Vishay, SI4933DY-T1-E3 Datasheet

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SI4933DY-T1-E3

Manufacturer Part Number
SI4933DY-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,7.4A I(D),SO
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4933DY-T1-E3

Rohs Compliant
YES
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
1V @ 500µA
Gate Charge (qg) @ Vgs
70nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4933DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4933DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 962
Document Number: 71980
S09-0867-Rev. D, 18-May-09
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information:
V
DS
- 12
G
G
S
S
(V)
1
1
2
2
1
2
3
4
Top View
SO-8
0.014 at V
0.017 at V
0.022 at V
Si4933DY -T1-E3
Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
J
a
= 150 °C)
a
Dual P-Channel 12-V (D-S) MOSFET
GS
GS
GS
8
7
6
5
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
D
D
D
D
(Lead (Pb)-free)
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
D
- 9.8
- 8.9
- 7.8
Steady State
Steady State
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
G
stg
1
P-Channel MOSFET
®
Power MOSFET
D
S
Typical
1
1
10 s
- 9.8
- 7.8
- 1.7
2.0
1.3
45
85
26
- 55 to 150
- 12
- 30
± 8
Steady State
Maximum
- 7.4
- 5.9
- 0.9
G
62.5
110
1.1
0.7
35
Vishay Siliconix
2
P-Channel MOSFET
Si4933DY
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4933DY-T1-E3

SI4933DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4933DY -T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4933DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71980 S09-0867-Rev. D, 18-May °C J 0.8 1.0 1.2 1.4 Si4933DY Vishay Siliconix 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

Page 4

... Si4933DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 500 µA 75 100 125 150 100 Limited DS(on D(on) 1 Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71980. Document Number: 71980 S09-0867-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4933DY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° 0.44 0.64 Package Information Vishay Siliconix H C All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.010 0.189 0.196 ...

Page 7

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 8

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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