SI6983DQ-T1-E3 Vishay, SI6983DQ-T1-E3 Datasheet
SI6983DQ-T1-E3
Specifications of SI6983DQ-T1-E3
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SI6983DQ-T1-E3 Summary of contents
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... iew Ordering Information: Si6983DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si6983DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72367 S-81221-Rev. D, 02-Jun °C J 0.9 1.2 1.5 Si6983DQ Vishay Siliconix 3500 3000 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1.40 1 ...
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... Si6983DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 400 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on 0 °C C Single Pulse ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72367. Document Number: 72367 S-81221-Rev. D, 02-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6983DQ Vishay Siliconix - www.vishay.com 10 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...