SI7129DN-T1-GE3 Vishay, SI7129DN-T1-GE3 Datasheet

P-CHANNEL 30-V (D-S) MOSFET

SI7129DN-T1-GE3

Manufacturer Part Number
SI7129DN-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI7129DN-T1-GE3

Minimum Operating Temperature
- 50 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0114 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
37 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14.4 A
Power Dissipation
3800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
SI7129DN-T1-GE3
Quantity:
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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on T
Document Number: 68966
S10-2023-Rev. B, 06-Sep-10
Ordering Information: Si7129DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 30
(V)
8
3.30 mm
D
C
7
0.0114 at V
0.0200 at V
D
= 25 °C
6
D
R
PowerPAK 1212-8
DS(on)
Bottom V ie w
5
D
GS
GS
(Ω)
= - 10 V
= - 4.5V
J
= 150 °C)
1
S
2
S
P-Channel 30 V (D-S) MOSFET
3
S
I
D
3.30 mm
- 35
- 35
4
(A)
G
e,f
c, d
A
Q
24.6 nC
= 25 °C, unless otherwise noted)
g
(Typ.)
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• Adaptor Switch
• Notebook PC
Definition
Package with Small Size and Low 1.07 mm
Profile
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
and UIS Tested
®
Power MOSFET
- 50 to 150
G
- 14.4
- 11.5
- 3.2
3.8
2.4
31.25
Limit
- 35
- 35
- 35
± 20
52.1
- 30
- 60
- 25
260
P-Channel MOSFET
3.3
a, b
a, b
a, b
e
e
a, b
a, b
e
Vishay Siliconix
®
S
D
Si7129DN
www.vishay.com
Unit
mJ
°C
W
V
A
1

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SI7129DN-T1-GE3 Summary of contents

Page 1

... Bottom Ordering Information: Si7129DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7129DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...

Page 3

... Gate Charge Document Number: 68966 S10-2023-Rev. B, 06-Sep-10 1.2 0 0.6 0.3 0 3600 3000 2400 1800 = 10 V 1200 600 1.8 1.5 1 0.9 0 Si7129DN Vishay Siliconix 125 ºC 25 º º Gate-to-Source Voltage ( Transfer Characteristics C iss C oss C rss Drain-Source Voltage (V) DS Capacitance 4.5 V ...

Page 4

... Si7129DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 º 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2.0 1.8 1.6 1.4 1 Temperature (ºC) J Threshold Voltage 100 Limited 0.1 0.01 www.vishay.com 4 0.04 0.03 0. º ...

Page 5

... Document Number: 68966 S10-2023-Rev. B, 06-Sep- 100 T - CaseTemperature (°C) C Current Derating* 2 1.5 1 0.5 0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7129DN Vishay Siliconix 125 150 100 125 T - Ambient Temperature (ºC) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7129DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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