SI7459DP-T1-GE3 Vishay, SI7459DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7459DP-T1-GE3
• Description: P-CH 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7459DP-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7459DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72631.
Document Number: 72631
S09-0273-Rev. D, 16-Feb-09
0.01
0.1
2
1
10
-4
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si7459DP
www.vishay.com
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