SI7886ADP-T1-E3 Vishay, SI7886ADP-T1-E3 Datasheet
SI7886ADP-T1-E3
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SI7886ADP-T1-E3 Summary of contents
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... V GS PowerPAK SO Bottom View Ordering Information: Si7886ADP-T1 Si7886ADP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
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... Si7886ADP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... Document Number: 73156 S-51016—Rev. B, 23-May-05 8000 7000 6000 5000 4000 3000 2000 1000 0.025 0.020 0.015 0.010 T = 25_C J 0.005 0.000 0.8 1.0 1.2 Si7886ADP Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1.4 1.2 1.0 0.8 0.6 − ...
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... Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J *Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 − ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73156. Document Number: 73156 S-51016—Rev. B, 23-May-05 −3 − Square Wave Pulse Duration (sec) Si7886ADP Vishay Siliconix − www.vishay.com 5 ...