SI7900AEDN-T1-GE3 Vishay

SI7900AEDN-T1-GE3

Manufacturer Part Number

SI7900AEDN-T1-GE3

Description

DUAL N-CH 20V (D-S) MOSFET, COMMON DRAIN

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI7900AEDN-T1-GE3

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

26 mOhm @ 8.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

900mV @ 250µA

Gate Charge (qg) @ Vgs

16nC @ 4.5V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI7900AEDN-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7900AEDN-T1-GE3

Manufacturer:

I-PEX

Quantity:

1 001

Related parts for SI7900AEDN-T1-GE3

Related keywords

SI7900AEDN-T1-GE3 component
SI7900AEDN-T1-GE3 part
SI7900AEDN-T1-GE3 distributor
SI7900AEDN-T1-GE3 RoHS