SI7940DP-T1-E3 Vishay, SI7940DP-T1-E3 Datasheet

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SI7940DP-T1-E3

Manufacturer Part Number
SI7940DP-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,12V V(BR)DSS,7.6A I(D),LLCC
Manufacturer
Vishay
Datasheet

Specifications of SI7940DP-T1-E3

Rohs Compliant
YES
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.017 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71845
S09-0268-Rev. E, 16-Feb-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
THERMAL RESISTANCE RATINGS
Parameter
PRODUCT SUMMARY
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
12
8
(V)
D1
6.15 mm
7
D1
6
D2
PowerPAK SO-8
0.017 at V
0.025 at V
Bottom View
5
Si7940DP-T1-E3 (Lead (Pb)-free)
Si7940DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
R
DS(on)
1
GS
GS
S 1
J
a
(Ω)
= 150 °C)
= 4.5 V
= 2.5 V
a
Dual N-Channel 12-V (D-S) MOSFET
2
G1
3
S2
5.15 mm
a
4
G2
a
b, c
I
A
D
11.8
9.8
(A)
= 25 °C, unless otherwise noted
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• New Low Thermal Resistance PowerPAK
• PWM Optimized
• 100 % R
• Point-of-Load Synchronous Rectifier
• Synchronous Buck Shoot-Through Resistant
Symbol
Symbol
T
R
R
J
Available
TrenchFET
Package with Low 1.07 mm Profile
- 5 V or 3.3 V BUS Step Down
- Q
V
V
I
P
, T
I
DM
thJA
thJC
G
I
DS
GS
D
S
D
1
g
stg
Optimized for 500 kHz and Operation
N-Channel MOSFET
g
Tested
®
D
S
Power MOSFET
1
1
Typical
10 s
11.8
9.5
2.9
3.5
2.2
3.9
26
60
- 55 to 150
260
± 8
12
20
Steady State
Maximum
7.6
6.1
1.1
1.4
0.9
5.5
35
85
G
Vishay Siliconix
2
N-Channel MOSFET
Si7940DP
www.vishay.com
®
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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SI7940DP-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7940DP-T1-E3 (Lead (Pb)-free) Si7940DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7940DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71845 S09-0268-Rev. E, 16-Feb- 2 °C J 0.8 1.0 1.2 Si7940DP Vishay Siliconix 2500 2000 C iss 1500 1000 C oss C rss 500 Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 ...

Page 4

... Si7940DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 μ 100 125 150 100 Limited DS(on D(on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71845. Document Number: 71845 S09-0268-Rev. E, 16-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7940DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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