SI7997DP-T1-GE3 Vishay

Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

SI7997DP-T1-GE3

Manufacturer Part Number

SI7997DP-T1-GE3

Description

Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI7997DP-T1-GE3

Fet Type

2 P-Channel (Dual)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5.5 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

60A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

160nC @ 10V

Input Capacitance (ciss) @ Vds

6200pF @ 15V

Power - Max

46W

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Configuration

Dual

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0045 Ohms

Forward Transconductance Gfs (max / Min)

71 S

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 60 A

Power Dissipation

46 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

106 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI7997DP-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI7997DP-T1-GE3

Manufacturer:

ON

Quantity:

1 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SI7997DP-T1-GE3

0

Related parts for SI7997DP-T1-GE3

Related keywords

SI7997DP-T1-GE3 component
SI7997DP-T1-GE3 part
SI7997DP-T1-GE3 distributor
SI7997DP-T1-GE3 RoHS