SI7997DP-T1-GE3 Vishay
![Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V](/photos/16/8/160848/powerpak12128_sml.jpg)
SI7997DP-T1-GE3
Manufacturer Part Number
SI7997DP-T1-GE3
Description
Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7997DP-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6200pF @ 15V
Power - Max
46W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0045 Ohms
Forward Transconductance Gfs (max / Min)
71 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 60 A
Power Dissipation
46 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
106 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7997DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7997DP-T1-GE3
Manufacturer:
ON
Quantity:
1 000