SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 2

• Manufacturer Part Number: SI8435DB-T1-E1
• Description: P CH MOSFET, -20V, 10A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8435DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6.72 A
• Power Dissipation: 2.78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8435DB-T1-E1TR

Si8435DB
Vishay Siliconix
Notes:
a. Surface Mounted on 1“ x 1“ FR4 board.
b. Maximum under Steady State conditions is 72 °C/W.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
a,b
= 25 °C, unless otherwise noted
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
I
I
C
V
D(on)
DS(on)
C
GS(th)
C
Q
Q
d(on)
d(off)
GSS
DSS
DS
g
Q
R
t
DS
oss
t
iss
rss
gd
fs
gs
r
f
g
g
/T
/T
J
J
Steady State
V
V
V
I
V
DS
D
DS
DS
DS
≅ - 1 A, V
= - 16 V, V
= - 20 V, V
= - 10 V, V
V
V
= - 10 V, V
V
V
V
V
V
V
V
V
V
DS
V
DS
GS
GS
DD
DS
GS
GS
GS
GS
DS
DS
Test Conditions
≤ - 5 V, V
= V
= 0 V, I
= - 20 V, V
= - 0.1 V, f = 1 MHz
= - 10 V, R
= 0 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 1.5 V, I
= - 10 V, I
I
D
GEN
GS
= - 250 µA
GS
GS
GS
GS
, I
Symbol
= - 4.5 V, R
D
R
R
= - 4.5 V, I
D
= 0 V , T
= - 5 V, I
GS
GS
= 0 V, f = 1 MHz
thJA
thJF
= - 250 µA
= - 250 µA
D
GS
D
D
D
D
L
= ± 5 V
= - 4.5 V
= - 1 A
= - 1 A
= - 1 A
= - 1 A
= - 1 A
= 10 Ω
= 0 V
J
D
D
= 70 °C
g
= - 1 A
= - 1 A
= 1 Ω
Typical
35
16
- 0.35
Min.
- 20
- 15
Maximum
- 15.5
0.034
0.040
0.048
0.055
1600
Typ.
10.5
3.25
1.95
265
175
230
2.5
45
20
23
22
20
15
29
91
S-82119-Rev. D, 08-Sep-08
Document Number: 73559
± 100
0.041
0.048
0.058
0.075
Max.
- 1.0
- 10
345
137
- 1
16
35
33
23
44
°C/W
Unit
mV/°C
Unit
nA
µA
nC
pF
ns
Ω
Ω
V
V
A
S