SI9945BDY-T1-GE3 Vishay, SI9945BDY-T1-GE3 Datasheet

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SI9945BDY-T1-GE3

Manufacturer Part Number
SI9945BDY-T1-GE3
Description
DUAL N-CHANNEL 60-V (D-S) MOSFET
Manufacturer
Vishay
Type
Power MOSFETr

Specifications of SI9945BDY-T1-GE3

Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.058Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI9945BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI9945BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9945BDY-T1-GE3
0
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Part Number:
SI9945BDY-T1-GE3
Quantity:
280 000
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Part Number:
SI9945BDY-T1-GE3
Quantity:
70 000
Company:
Part Number:
SI9945BDY-T1-GE3
Quantity:
20
Company:
Part Number:
SI9945BDY-T1-GE3
Quantity:
227
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
60
(V)
C
= 25 °C.
0.072 at V
G
G
0.058 at V
S
S
1
1
2
2
R
DS(on)
1
2
3
4
GS
GS
J
(Ω)
Top View
= 4.5 V
= 10 V
SO-8
= 150 °C)
a, d
Dual N-Channel 60-V (D-S) MOSFET
8
7
6
5
I
D
5.3
4.7
(A)
D
D
D
D
1
1
2
2
a
A
= 25 °C, unless otherwise noted
Q
Steady State
g
13 nC
L = 0 1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LCD TV CCFL Inverter
• Load Switch
Symbol
Symbol
T
R
R
J
Definition
TrenchFET
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJF
GS
DS
AS
D
S
D
stg
®
Power MOSFET
Typical
G
1
55
33
N-Channel MOSFET
- 55 to 150
4.3
3.4
1.7
1.3
Limit
± 20
2
5.3
4.3
2.6
6.1
3.1
60
20
11
b, c
2
b, c
b, c
b, c
b, c
D
S
1
1
Maximum
62.5
40
Vishay Siliconix
Si9945BDY
G
2
N-Channel MOSFET
www.vishay.com
°C/W
Unit
D
S
Unit
mJ
°C
W
2
2
V
A
1

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SI9945BDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si9945BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 New Product 1.2 1.4 1.6 1.8 2.0 1000 Si9945BDY Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 200 C oss ...

Page 4

... Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.12 0.11 0.10 0.09 0.08 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 New Product 100 125 150 0.0001 0.001 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si9945BDY Vishay Siliconix 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ...

Page 6

... Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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