SIS412DN-T1-GE3 Vishay, SIS412DN-T1-GE3 Datasheet - Page 2
SIS412DN-T1-GE3
Manufacturer Part Number
SIS412DN-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIS412DN-T1-GE3.pdf
(7 pages)
Specifications of SIS412DN-T1-GE3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
435pF @ 15V
Power - Max
15.6W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A
Power Dissipation
3200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PowerPAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SIS412DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIS412DN-T1-GE3
Manufacturer:
ATMEL
Quantity:
21 500
Company:
Part Number:
SIS412DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
1 380
Part Number:
SIS412DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiS412DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
GS(th)
D(on)
DS(on)
C
V
C
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
g
Q
R
DS
I
SM
t
t
t
oss
t
t
t
t
DS
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
rr
g
g
/T
/T
J
J
I
New Product
F
V
V
I
= 6.3 A, dI/dt = 100 A/µs, T
V
V
I
D
D
DS
DS
DS
DS
≅ 6.3 A, V
≅ 6.3 A, V
= 15 V, V
= 30 V, V
= 15 V, V
V
V
= 15 V, V
V
V
V
V
V
V
V
V
DS
DS
I
GS
DD
DD
S
GS
DS
DS
GS
DS
Test Conditions
= 6.3 A, V
= V
= 0 V, V
= 0 V, I
= 30 V, V
= 4.5 V, I
= 15 V, R
= 15 V, R
≥ 5 V, V
= 10 V, I
= 10 V, I
T
I
f = 1 MHz
D
GEN
GS
GEN
C
GS
GS
GS
= 250 µA
GS
= 25 °C
, I
= 4.5 V, I
= 0 V, T
= 10 V, I
= 4.5 V, R
D
GS
= 0 V, f = 1 MHz
= 10 V, R
D
GS
D
D
GS
= 250 µA
D
GS
L
L
= 250 µA
= ± 20 V
= 7.8 A
= 7.8 A
= 7.0 A
= 2.4 Ω
= 2.4 Ω
= 10 V
= 0 V
= 0 V
J
D
D
= 55 °C
g
= 7.8 A
g
J
= 7.8 A
= 1 Ω
= 1 Ω
= 25 °C
Min.
1.0
1.5
30
20
S09-0135-Rev. C, 02-Feb-09
0.020
0.024
Typ.
- 4.5
435
3.8
1.4
1.1
3.2
0.8
17
95
42
15
12
13
10
10
15
10
15
35
8
5
7
9
6
Document Number: 69006
± 100
0.024
0.030
Max.
2.5
4.5
4.2
1.2
12
25
20
20
15
10
15
25
15
30
25
12
1
5
6
mV/°C
Unit
nA
µA
pF
nC
nC
ns
ns
ns
Ω
Ω
V
V
A
S
A
V