ST083S08PFN1 Vishay, ST083S08PFN1 Datasheet - Page 8

• Manufacturer Part Number: ST083S08PFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),85A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST083S08PFN1

• Breakover Current Ibo Max: 2560 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 2.15 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST083SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
8
Dimensions
Device code
10
1
2
3
4
5
6
7
8
9
ST
1
- Thyristor
- Essential part number
- 3 = Fast turn-off
- S = Compression bonding stud
- Voltage code x 100 = V
-
- Reapplied dV/dt code (for t
- t
-
- PbF = Lead (Pb)-free
q
P = Stud base 1/2"-20UNF-2A threads
M = Metric M12, contact factory for availability
0 = Eyelet terminals (gate and aux. cathode leads)
1 = Fast-on terminals (gate and aux. cathode leads)
2 = Flag terminals (gate and aux. cathode leads)
code
08
2
For technical questions, contact:
3
3
LINKS TO RELATED DOCUMENTS
Inverter Grade Thyristors
(Stud Version), 85 A
S
4
RRM
12
q
5
(see Voltage Ratings table)
test condition)
P
6
[e-mail]
F
7
N
8
www.vishay.com/doc?95003
dV/dt - t
t
up to 800V
t
only for
1000/1200 V
q
q
0
9
(µs)
(µs)
PbF
q
10
combinations available
dV/dt (V/µs)
Document Number: 94334
10
20
20
Revision: 25-Nov-09
200
FN
FK
FK