ST110S04P1V Vishay, ST110S04P1V Datasheet - Page 5

• Manufacturer Part Number: ST110S04P1V
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST110S04P1V

• Breakover Current Ibo Max: 2830 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94393
Revision: 17-Aug-10
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Pulses (N)
2400
2200
2000
1800
1600
1400
1200
1000
1
At Any Rated Load Condition And With
Rated V
ST110S Series
RRM
[e-mail], [e-mail],
Applied Following Surge.
For technical questions within your region, please contact one of the following:
220
200
180
160
140
120
100
10
80
60
40
20
0
0
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
RMS Limit
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
180°
120°
J
DC
90°
60°
30°
10000
1000
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 4 - On-State Power Loss Characteristics
100
10
100
Phase Control Thyristors
0.5
(Stud Version), 110 A
Conduction Period
Instantaneous On-state Voltage (V)
ST110S Series
T = 125°C
J
1.5
Tj = 125˚C
Tj = 25˚C
ST110S Series
2.5
25
Maximum Allowable Ambient Temperature (°C)
3.5
50
4.5
Fig. 6 - Maximum Non-Repetitive Surge Current
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
[e-mail]
0.01
Of Conduction May Not Be Maintained.
75
Maximum Non Repetitive Surge Current
ST110S Series
Versus Pulse Train Duration. Control
Pulse Train Duration (s)
100
Vishay Semiconductors
0.1
ST110SPbF Series
Initial T = 125°C
No Voltage Reapplied
Rated V
125
J
RRM
1
Reapplied
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10
5