ST110S08P1V Vishay, ST110S08P1V Datasheet - Page 4

• Manufacturer Part Number: ST110S08P1V
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST110S08P1V

• Breakover Current Ibo Max: 2830 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST110SPbF Series
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
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4
R
CONDUCTION ANGLE
thJC
130
120
110
100
CONDUCTION
90
80
180°
120°
90°
60°
30°
Fig. 1 - Current Ratings Characteristics
0
Average On-state Current (A)
20
ST110S Series
R
thJC
40
30°
[e-mail], [e-mail],
160
140
120
100
(DC) = 0.195 K/W
80
60
40
20
For technical questions within your region, please contact one of the following:
0
60°
60
SINUSOIDAL CONDUCTION
0
Conduction Angle
90°
RMS Limit
80
Average On-state Current (A)
20
180°
120°
120°
90°
60°
30°
100
40
0.035
0.041
0.052
0.076
0.126
180°
Fig. 3 - On-State Power Loss Characteristics
120
60
Phase Control Thyristors
ST110S Series
T = 125°C
Conduction Angle
(Stud Version), 110 A
J
80
100
thJC
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
120
25
Maximum Allowable Ambient Temperature (°C)
50
0.025
0.042
0.056
0.079
0.127
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130
120
110
100
90
80
75
Fig. 2 - Current Ratings Characteristics
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
30°
100
ST110S Series
R
thJC
60°
(DC) = 1.95 K/W
90°
125
TEST CONDITIONS
120°
T
Conduction Period
J
= T
180°
Document Number: 94393
J
maximum
DC
Revision: 17-Aug-10
UNITS
K/W