ST110S12P0VPBF Vishay, ST110S12P0VPBF Datasheet - Page 6
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ST110S12P0VPBF
Manufacturer Part Number
ST110S12P0VPBF
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),110A I(T),TO-209AC
Manufacturer
Vishay
Datasheet
1.ST110S12P0V.pdf
(8 pages)
Specifications of ST110S12P0VPBF
Breakover Current Ibo Max
2830 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
20 mA
Forward Voltage Drop
1.52 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST110SPbF Series
Vishay Semiconductors
www.vishay.com
6
0.001
0.01
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
100
0.1
0.1
10
0.001
0.001
For technical questions within your region, please contact one of the following:
1
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Steady State Value
R
(DC Operation)
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
thJC
rated di/dt : 20V, 10ohms; tr<=1 µs
= 0.195 K/W
VGD
0.01
Fig. 8 - Thermal Impedance Z
IGD
0.01
Phase Control Thyristors
Device: ST110S Series
(Stud Version), 110 A
Fig. 9 - Gate Characteristics
Square Wave Pulse Duration (s)
Instantaneous Gate Current (A)
0.1
(b)
0.1
ST110S Series
(a)
thJC
1
Frequency Limited by PG(AV)
Characteristic
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
DiodesEurope@vishay.com
1
10
(1)
(2)
(3)
(4)
10
100
Document Number: 94393
Revision: 17-Aug-10