ST1200C16K1 Vishay, ST1200C16K1 Datasheet - Page 2

• Manufacturer Part Number: ST1200C16K1
• Description: SILICON CONTROLLED RECTIFIER,1.6kV V(DRM),1.7kA I(T),TO-200var75
• Manufacturer: Vishay

Specifications of ST1200C16K1

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST1200C..KP Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact:
SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
I
T(RMS)
dI/dt
I
I
I
RRM
T(TO)1
T(TO)2
V
T(AV)
I
DRM
TSM
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
√t
L
Phase Control Thyristors
t
,
(Stud Version), 1650 A
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
d
R
J
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, t
= 4000 A, T
= 550 A, T
J
J
J
maximum, anode voltage ≤ 80 % V
maximum linear to 80 % rated V
maximum, rated V
T(AV)
T(AV)
[e-mail]
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
J
J
= T
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I < π x I
< I < π x I
J
g
J
J
maximum, dI/dt = 40 A/μs,
J
/dt = 1 A/μs
maximum, t
maximum
maximum
= 25 °C
RRM
RRM
r
≤ 1 μs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
), T
), T
p
= 10 ms sine pulse
J
J
applied
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
p
= 500 μs
Document Number: 94394
1650 (700)
VALUES
VALUES
VALUES
Revision: 23-Apr-10
55 (85)
30 500
32 000
25 700
26 900
46 510
1000
3080
4651
4250
3300
3000
1000
0.91
1.01
0.21
0.19
1.73
200
500
100
600
1.9
UNITS
UNITS
UNITS
kA
kA
A/μs
V/μs
mΩ
mA
mA
°C
μs
A
A
V
V
2
2
√s
s