ST1200C16K1L Vishay, ST1200C16K1L Datasheet - Page 6

• Manufacturer Part Number: ST1200C16K1L
• Description: SILICON CONTROLLED RECTIFIER,1.6kV V(DRM),1.7kA I(T),TO-200var75
• Manufacturer: Vishay

Specifications of ST1200C16K1L

• Rated Repetitive Off-state Voltage Vdrm: 1600 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: A-24
• Breakover Current Ibo Max: 32000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST1200C..KP Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
0.001
1
2
3
4
5
6
7
8
9
1
ST
1
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
rated di/dt : 20V, 10ohms; tr<=1 µs
-
-
-
-
-
-
-
-
-
For technical questions, contact:
120
2
VGD
Thyristor
Essential part number
0 = Converter grade
C = Ceramic PUK
Voltage code: Code x 100 = V
K = PUK case A-24 (K-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Critical dV/dt:
P = Lead (Pb)-free
0.01
IGD
LINKS TO RELATED DOCUMENTS
0
3
Phase Control Thyristors
Device: ST1200C..K Series
(Stud Version), 1650 A
Fig. 11 - Gate Characteristics
Instantaneous Gate Current (A)
C
4
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
0.1
20
(b)
5
[e-mail]
(a)
K
6
RRM
1
Frequency Limited by PG(AV)
(see Voltage Ratings table)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
1
7
www.vishay.com/doc?95081
10
8
-
(1)
(2)
P
9
(3)
100
Document Number: 94394
Revision: 23-Apr-10