ST1200C20K1 Vishay, ST1200C20K1 Datasheet - Page 3

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ST1200C20K1

Manufacturer Part Number
ST1200C20K1
Description
SILICON CONTROLLED RECTIFIER,2kV V(DRM),1.7kA I(T),TO-200var75
Manufacturer
Vishay
Datasheet

Specifications of ST1200C20K1

Rated Repetitive Off-state Voltage Vdrm
2000 V
Off-state Leakage Current @ Vdrm Idrm
100 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
A-24
Breakover Current Ibo Max
32000 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
2000 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
• The table above shows the increment of thermal resistance R
Document Number: 94394
Revision: 23-Apr-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.003
0.004
0.005
0.007
0.012
For technical questions, contact:
SYMBOL
SYMBOL
R
R
+ V
P
- V
P
V
T
V
thC-hs
I
thJ-hs
G(AV)
I
I
GM
T
Phase Control Thyristors
GD
GT
GM
Stg
DOUBLE SIDE
GT
GD
GM
J
GM
(Stud Version), 1650 A
0.003
0.004
0.005
0.007
0.012
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
thJC
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
when devices operate at different conduction angles than DC
SINGLE SIDE
RECTANGULAR CONDUCTION
TEST CONDITIONS
TEST CONDITIONS
0.002
0.004
0.005
0.007
0.012
indmodules@vishay.com
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
DOUBLE SIDE
Vishay High Power Products
0.002
0.004
0.005
0.007
0.012
DRM
ST1200C..KP Series
anode to
TEST CONDITIONS
T
J
= T
- 40 to 125
- 40 to 150
TYP.
VALUES
200
100
1.4
1.1
0.9
50
24 500
0.0.42
(2500)
0.021
0.006
0.003
J
VALUES
425
maximum
0.25
A-24 (K-PUK)
3.0
5.0
16
20
10
3
MAX.
200
www.vishay.com
3.0
-
-
-
-
UNITS
K/W
(kg)
°C
UNITS
UNITS
N
g
K/W
mA
mA
W
A
V
V
V
3

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