ST180C12C0L Vishay, ST180C12C0L Datasheet - Page 6

• Manufacturer Part Number: ST180C12C0L
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),350A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST180C12C0L

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Breakover Current Ibo Max: 5230 A
• Gate Trigger Current (igt): 150 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST180CPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
1
0.001
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
≤ 1 µs
1
2
3
4
5
6
7
8
9
ST
1
-
-
-
-
-
-
-
-
-
V
For technical questions, contact: [e-mail]
GD
18
0.01
2
I
Thyristor
Essential part number
0 = Converter grade
C = Ceramic PUK
Voltage code x 100 = V
C = PUK case TO-200AB (A-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Critical dV/dt:
Lead (Pb)-free
GD
r
(Hockey PUK Version), 350 A
≤ 1 µs
LINKS TO RELATED DOCUMENTS
0
3
Phase Control Thyristors
Instantaneous Gate Current (A)
Device: ST180C..C Series
Fig. 11 - Gate Characteristics
C
4
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
0.1
(b)
20
5
RRM
(a)
(see Voltage Ratings table)
C
6
1
1
7
http://www.vishay.com/doc?95074
Frequency limited by P
8
-
(1) P
(2) P
(3) P
(4) P
PbF
GM
GM
GM
GM
9
10
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
(1)
(2)
G(AV)
p
p
p
p
Document Number: 94396
= 4 ms
= 2 ms
= 1 ms
= 0.66 ms
(3) (4)
Revision: 11-Aug-08
100