ST183C04CFN1 Vishay, ST183C04CFN1 Datasheet - Page 7

• Manufacturer Part Number: ST183C04CFN1
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),370A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST183C04CFN1

• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Breakover Current Ibo Max: 5130 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94368
Revision: 30-Apr-08
100 000
10 000
10 000
1000
1000
100
100
10
10
10
10
Snubber circuit
R
C
V
10 000
s
s
D
100
= 47 Ω
= 0.22 µF
t
= 80 % V
0.1
5000
p
10
1
0.001
3000
ST183C..C Series
Sinusoidal pulse
2500
0.1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.2
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
DRM
r
100
100
1500
≤ 1 µs
0.3
0.5
1
1000 500
2
t
p
4
400 200 100
20 joules per pulse
For technical questions, contact: [e-mail]
10
1000
1000
ST183C..C Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
0.01
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
C
V
= 40 °C
GD
(Hockey PUK Version), 370 A
I
r
GD
Inverter Grade Thyristors
≤ 1 µs
50 Hz
Device: ST183C..C Series
10 000
10 000
Fig. 15 - Frequency Characteristics
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
0.1
(b)
(a)
100 000
10 000
10 000
1
1000
1000
100
100
Frequency limited by P
10
10
10
10
Vishay High Power Products
Snubber circuit
R
C
V
10 000
s
s
D
t
= 47 Ω
= 0.22 µF
= 80 % V
p
5000
(1) P
(2) P
(3) P
(4) P
0.1
ST183C..C Series
Rectangular pulse
dI/dt = 50 A/µs
3000
ST183CPbF Series
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2500
DRM
GM
GM
GM
GM
100
0.2
100
10
1500
(1)
G(AV)
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
0.3
1000
0.5
t
(2)
p
1
p
p
p
p
500
2
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
1000
1000
ST183C..C Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
400 200
(3)
C
20 joules per pulse
4
= 55 °C
(4)
10
100
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100
50 Hz
10 000
10 000
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