ST183S04PFL1 Vishay, ST183S04PFL1 Datasheet - Page 2

• Manufacturer Part Number: ST183S04PFL1
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),195A I(T),TO-209AB
• Manufacturer: Vishay

Specifications of ST183S04PFL1

• Breakover Current Ibo Max: 5130 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST183SPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: [e-mail]
SYMBOL
570
560
500
340
60
V
V
I
T(RMS)
I
I
V
T(TO)1
T(TO)2
T(AV)
180° el
I
TSM
I
2
r
r
I
I
2
TM
t1
t2
H
√t
L
47 /0.22
t
Inverter Grade Thyristors
V
50
DRM
50
(Stud Version), 195 A
180° conduction, half sine wave
DC at 74 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
J
J
370
360
300
190
85
= 25 °C, I
= 25 °C, V
I
TM
= 600 A, T
T(AV)
T(AV)
T
), T
), T
A
J
> 30 A
T(AV)
T(AV)
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
= 12 V, R
= T
J
J
900
940
925
760
60
= T
= T
TEST CONDITIONS
J
< I < π x I
< I < π x I
maximum, t
180° el
J
J
47/0.22
maximum
maximum
V
RRM
RRM
50
DRM
a
-
= 6 Ω, I
T(AV)
T(AV)
610
630
610
490
Sinusoidal half wave,
initial T
I
p
85
TM
= 10 ms sine wave pulse
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
J
J
J
maximum
maximum
maximum
7040
3200
1780
880
60
100 µs
47/0.22
V
50
DRM
-
Document Number: 94369
5220
2280
1200
560
VALUES
I
85
TM
4900
5130
4120
4310
1200
1000
1.40
1.45
0.67
0.58
1.80
195
306
120
110
600
85
85
78
Revision: 30-Apr-08
UNITS
Ω/µF
UNITS
A/µs
kA
kA
°C
mΩ
A
V
mA
°C
A
A
V
2
2
√s
s