ST223C08CFL1 Vishay, ST223C08CFL1 Datasheet - Page 3

• Manufacturer Part Number: ST223C08CFL1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),390A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST223C08CFL1

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching
On-state Conduction
Document Number: 93672
Triggering
Blocking
di/dt
t
P
P
I
+V
-V
I
V
I
V
t
V
V
V
r
r
I
I
dv/dt
I
I
d
GM
GT
GD
q
H
L
t
t
RRM
DRM
GM
G(AV)
GT
GD
1
2
TM
T(TO)1
T(TO)2
GM
GM
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
Max. non-repetitive rate of rise
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
of turned-on current
Typical delay time
Parameter
Max. turn-off time
Parameter
Max. peak on-state voltage
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
Parameter
Parameter
ST223C..C Units
ST223C..C Units
ST223C..C Units
ST223C..C Units
Min
10
1000
1.05
1.58
0.25
1000
200
1.09
0.88
0.82
600
500
0.78
60
10
10
20
40
20
3
5
Max
30
A/µs
V/µs
mΩ
mA
mA
mA
mA
µs
W
V
V
A
V
V
T
T
T
T
Conditions
T
I
T
Resistive load, Gate pulse: 10V, 5Ω source
T
V
Conditions
T
I
(16.7% x π x I
(I > π x I
T
T
Conditions
(16.7% x π x I
(I > π x I
Conditions
T
available on request
T
TM
TM
J
J
J
J
R
J
J
J
J
J
J
J
= 25°C, V
J
= T
= 25°C, V
= T
= T
= T
= T
= T
= 600A, T
= 50V, t
= T
= T
= 25°C, I
= 25°C, V
= 2 x di/dt
J
J
J
J
J
J
J
J
max, I
max, f = 50Hz, d% = 50
max, V
max, t
max, t
max, rated V
max. linear to 80% V
max, rated V
T(AV)
T(AV)
p
DM
= 500µs, dv/dt: see table in device code
A
), T
), T
J
T
p
p
TM
T(AV)
A
= 12V, Ra = 6Ω
T(AV)
= T
DRM
= rated V
> 30A
= 12V, Ra = 6Ω, I
≤ 5ms
≤ 5ms
J
J
= 300A, commutating di/dt = 20A/µs
= T
= T
J
= rated V
< I < π x I
< I < π x I
Bulletin I25174 rev. B 04/00
max, t
DRM
J
J
DRM
max.
max.
ST223C..C Series
DRM
applied
/V
p
= 10ms sine wave pulse
RRM
, I
DRM
T(AV)
T(AV)
DRM
TM
applied
, higher value
), T
= 50A DC, t
), T
www.vishay.com
G
J
J
= 1A
= T
= T
J
J
max.
max.
p
= 1µs
3