ST223C08CFN1 Vishay, ST223C08CFN1 Datasheet - Page 5

• Manufacturer Part Number: ST223C08CFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),390A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST223C08CFN1

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Breakover Current Ibo Max: 6130 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93672
Revision: 14-May-08
10000
N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Maximum Non-Repetitive Surge Current
5500
5000
4500
4000
3500
3000
2500
1000
6000
5500
5000
4500
4000
3500
3000
2500
2000
Fig. 9 - On-State Voltage Drop Characteristics
100
0.01
1
0
At Any Rated Load Condition An d W ith
O f C o n d u c t io n M a y N o t Be M a in ta in e d .
M a x im u m N o n R e p e t it iv e S urg e C u rre n t
ST223C..C Series
S T2 2 3 C ..C S e r ie s
In sta ntaneous O n-state Voltage (V )
Single and Double Side Cooled
Single and Double Side Cooled
Rated V
V e rsu s P u lse T ra in D ura t io n . C o n t ro l
2
P u lse T ra in D u ra tio n (s)
RRM
Applied Followin g Surge.
4
ST223C..C Series
N o V o lta g e R e a p p lie d
R a te d V
0 1
0.1
T = 25°C
T = 125°C
J
J
6
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
For technical questions, contact: [e-mail]
In it ia l T = 1 2 5° C
RRM
R e a p p lie d
(Hockey PUK Version), 390 A
J
J
8
Inverter Grade Thyristors
1
10
0 0
1
Fig. 12 - Reverse Recovered Current Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 10 - Thermal Impedance Z
0 .0 0 1
2 5 0
2 0 0
1 5 0
1 0 0
0 .0 1
1 6 0
1 4 0
1 2 0
1 0 0
0 .1
5 0
8 0
6 0
4 0
2 0
R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s)
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s)
0
0 .0 0 1
0
1
Vishay High Power Products
0
0
S T 2 2 3 C ..C S e rie s
T = 1 2 5 °C
ST 2 2 3 C ..C S e rie s
J
S q ua re W a v e P u lse D u rat io n (s)
2 0
2 0
0 .0 1
I
T M
ST223C..C Series
= 50 0 A
20 0 A
30 0 A
10 0 A
4 0
4 0
50 A
S t e a d y S ta t e V a lu e
R
(S in g le Sid e C o o le d )
R
(D o u b le S id e C o o le d )
(D C O p e ra tio n )
0 .1
thJ-hs
thJ-h s
ST 2 2 3 C ..C S e rie s
T = 1 2 5 °C
6 0
6 0
J
thJ-hs
= 0 .1 7 K/ W
= 0 .0 8 K/ W
I
TM
1
= 5 00 A
8 0
8 0
Characteristics
30 0 A
1 00 A
20 0 A
50 A
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1 0 0
1 0 0
1 0
5