ST230S08P1VPBF Vishay, ST230S08P1VPBF Datasheet - Page 4
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ST230S08P1VPBF
Manufacturer Part Number
ST230S08P1VPBF
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),230A I(T),TO-209AB
Manufacturer
Vishay
Datasheet
1.ST230S16P0.pdf
(7 pages)
Specifications of ST230S08P1VPBF
Breakover Current Ibo Max
5970 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.55 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-93
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST230SPbF Series
Vishay High Power Products
• The table above shows the increment of thermal resistance R
www.vishay.com
4
130
120
110
100
90
80
Fig. 1 - Current Ratings Characteristics
0
Average On-state Current (A)
50
S T 230S S eries
R
thJC
30°
450
400
350
300
250
200
150
100
350
300
250
200
150
100
100
50
50
(DC) = 0.1 K/ W
0
0
0
0
60°
RMS Limit
RMS Limit
50 100 150 200 250 300 350 400
150
Conduction Angle
Average On-state Current (A)
180°
120°
Average On-state Current (A)
90°
DC
90°
60°
30°
50
For technical questions, contact: ind-modules@vishay.com
180°
120°
90°
60°
30°
120°
200
100
180°
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
250
150
Phase Control Thyristors
Conduction Period
Conduction Angle
S T230S S eries
T = 125°C
S T 230S S eries
T = 125°C
J
(Stud Version), 230 A
J
200
thJC
when devices operate at different conduction angles than DC
250
25
25
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
50
50
130
120
110
100
75
75
90
80
70
Fig. 2 - Current Ratings Characteristics
0
Average On-state Current (A)
100
100
100
30°
S T230S S eries
R
thJC
60°
125
125
90°
(DC) = 0.1 K/ W
200
120°
Conduction Period
180°
Document Number: 94399
300
Revision: 11-Aug-08
DC
400