ST230S12P1VPBF Vishay, ST230S12P1VPBF Datasheet - Page 6
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ST230S12P1VPBF
Manufacturer Part Number
ST230S12P1VPBF
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),230A I(T),TO-209AB
Manufacturer
Vishay
Datasheet
1.ST230S16P0.pdf
(7 pages)
Specifications of ST230S12P1VPBF
Breakover Current Ibo Max
5970 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.55 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-93
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST230SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
Note: For metric device M16 x 1.5 contact factory
1
2
3
4
5
6
7
8
9
100
0.1
ST
10
0.001
1
1
R ectangular gate pulse
a) Recommended load line for
b) R ecommended load line for
<=30% rated di/ dt : 10V, 10ohms
tr<=1 µs
-
-
-
-
-
-
-
-
-
rated di/ dt : 20V, 10ohms; tr<=1 µs
For technical questions, contact: ind-modules@vishay.com
23
2
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4"-16UNF2A threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
Lead (Pb)-free
VGD
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
0.01
LINKS TO RELATED DOCUMENTS
IGD
0
3
Phase Control Thyristors
Devic e: S T 230S S eries
(Stud Version), 230 A
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
S
4
0.1
16
(b)
5
RRM
(a)
(see Voltage Ratings table)
P
6
1
Frequency Limited by PG(AV)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
0
7
http://www.vishay.com/doc?95077
10
V
8
(1)
(2)
PbF
9
(3)
(4)
100
Document Number: 94399
Revision: 11-Aug-08