ST303C08LFL1 Vishay, ST303C08LFL1 Datasheet - Page 2
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ST303C08LFL1
Manufacturer Part Number
ST303C08LFL1
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),515A I(T),TO-200AC
Manufacturer
Vishay
Datasheet
1.ST303C10CFK0.pdf
(9 pages)
Specifications of ST303C08LFL1
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AC
Breakover Current Ibo Max
8320 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST303CPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: ind-modules@vishay.com
1314
1260
900
340
40
SYMBOL
180° el
V
V
I
I
T(RMS)
I
T(AV)
V
T(TO)1
T(TO)2
TSM
10/0.47
I
I
r
r
I
I
2
2
TM
t1
t2
Inverter Grade Thyristors
H
L
V
t
√t
50
DRM
50
(PUK Version), 620 A
1130
1040
700
230
55
I
TM
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 1255 A, T
T(AV)
T(AV)
2070
2190
1900
T
), T
), T
910
A
40
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, R
J
J
J
180° el
TEST CONDITIONS
= T
= T
= T
10/0.47
V
< I < π x I
< I < π x I
J
50
DRM
J
J
-
maximum,
maximum
maximum
RRM
RRM
a
= 6 Ω, I
1940
1880
1590
710
I
55
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
6930
3440
1850
J
J
J
740
40
maximum
maximum
maximum
100 µs
10/0.47
V
50
DRM
-
Document Number: 94373
6270
2960
1540
560
I
55
TM
620 (230)
VALUES
55 (85)
1180
7950
8320
6690
7000
3160
1000
Revision: 25-Jul-08
2.16
1.44
1.48
0.57
0.56
316
289
224
204
600
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
klA
kA
mΩ
mA
°C
A
A
V
2
2
s
√s