ST303C08LFN1 Vishay, ST303C08LFN1 Datasheet - Page 8

• Manufacturer Part Number: ST303C08LFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),515A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST303C08LFN1

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Breakover Current Ibo Max: 8320 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST303CPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
8
Dimensions
Device code
11
10
6
7
8
9
1
2
3
4
5
ST
1
-
-
-
-
-
-
-
-
-
-
-
30
2
(gate and aux. cathode unsoldered leads)
(gate and aux. cathode unsoldered leads)
(gate and aux. cathode soldered leads)
(gate and aux. cathode soldered leads)
(see Voltage Ratings table)
C = PUK case TO-200AB (E-PUK)
Reapplied dV/dt code (for t
t
0 = Eyelet terminals
1 = Fast-on terminals
2 = Eyelet terminals
3 = Fast-on terminals
Critical dV/dt:
P = Lead (Pb)-free
Thyristor
Essential part number
3 = Fast turn-off
C = Ceramic PUK
Voltage code x 100 = V
q
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
code
For technical questions, contact: [e-mail]
3
3
LINKS TO RELATED DOCUMENTS
Inverter Grade Thyristors
C
4
(PUK Version), 620 A
12
5
RRM
q
test condition)
C
6
H
7
* Standard part number.
All other types available only on request.
K
up to 800 V
only for
1000/1200 V
8
t
t
q
q
http://www.vishay.com/doc?95075
(µs)
(µs)
dV/dt - t
1
9
dV/dt (V/µs) 20
10
12
15
20
15
18
20
25
30
10
q
-
combinations available
CM DM EM FM HM
CN DN EN
CK DK EK FK* HK
CP DP
CK DK EK FK* HK
CL DL
CL
CJ
11
P
-
Document Number: 94373
DH EH FH
50 100 200 400
DJ
-
Revision: 25-Jul-08
EL FL* HL
EJ
-
-
FN* HN
FJ* HJ
-
-
HH
-
-