ST380C06C1 Vishay, ST380C06C1 Datasheet - Page 2
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ST380C06C1
Manufacturer Part Number
ST380C06C1
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),960A I(T),TO-200AB
Manufacturer
Vishay
Datasheet
1.ST380C06C0.pdf
(7 pages)
Specifications of ST380C06C1
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AB
Breakover Current Ibo Max
15700 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST380CPbF Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: ind-modules@vishay.com
SYMBOL
SYMBOL
SYMBOL
(Hockey PUK Version), 960 A
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM,
T(AV)
I
DRM
TSM
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
Phase Control Thyristors
√t
L
t
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
R
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 3000 A, T
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
= 550 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage ≤ 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I < π x I
< I < π x I
g
J
J
maximum, dI/dt = 40 A/µs,
/dt = 1 A/µs
J
J
maximum, t
= 25 °C
maximum
maximum
RRM
RRM
r
≤ 1 µs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
p
), T
), T
= 10 ms sine pulse
applied
J
J
J
= T
= T
= T
DRM
J
J
J
DRM
maximum
maximum
maximum
p
= 500 µs
Document Number: 94410
960 (440)
VALUES
VALUES
VALUES
Revision: 11-Aug-08
55 (75)
15 000
15 700
12 600
13 200
11 300
1900
1130
1030
1000
1000
0.85
0.88
0.25
0.24
1.60
800
725
600
100
500
1.0
50
UNITS
UNITS
kA
UNITS
kA
A/µs
V/µs
mΩ
mA
°C
mA
µs
A
A
V
V
2
2
√s
s