ST730C12L1L Vishay, ST730C12L1L Datasheet - Page 3
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ST730C12L1L
Manufacturer Part Number
ST730C12L1L
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),990A I(T),TO-200AC
Manufacturer
Vishay
Datasheet
1.ST730C08L0.pdf
(7 pages)
Specifications of ST730C12L1L
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
80 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AC
Breakover Current Ibo Max
18700 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
1200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
• The table above shows the increment of thermal resistance R
Document Number: 94414
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJ-hs
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE DOUBLE SIDE
SINUSOIDAL CONDUCTION
0.009
0.011
0.014
0.020
0.036
For technical questions, contact: ind-modules@vishay.com
(Hockey PUK Version), 990 A
Phase Control Thyristors
SYMBOL
SYMBOL
R
P
+ V
R
0.009
0.011
0.014
0.020
0.036
- V
P
V
V
T
G(AV)
I
I
thC-hs
I
thJ-hs
GM
T
GT
GD
GM
GD
Stg
GT
GM
J
GM
thJ-hs
T
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
J
RECTANGULAR CONDUCTION
SINGLE SIDE
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
when devices operate at different conduction angles than DC
J
J
J
J
J
0.006
0.010
0.015
0.021
0.036
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
TEST CONDITIONS
TEST CONDITIONS
p
p
p
DOUBLE SIDE
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
≤ 5 ms
0.006
0.011
0.015
0.021
0.036
Vishay High Power Products
ST730CLPbF Series
DRM
TEST CONDITIONS
anode to
T
J
= T
J
maximum
TYP.
200
100
- 40 to 125
- 40 to 150
TO-200AC (B-PUK)
2.5
1.8
1.1
50
VALUES
VALUES
14 700
(1500)
0.073
0.031
0.011
0.006
10.0
0.25
255
2.0
3.0
5.0
20
10
www.vishay.com
MAX.
200
3.0
-
-
-
-
UNITS
K/W
UNITS
UNITS
K/W
(kg)
mA
mA
°C
W
A
V
V
V
N
g
3