ST733C08LFM0 Vishay, ST733C08LFM0 Datasheet - Page 6
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ST733C08LFM0
Manufacturer Part Number
ST733C08LFM0
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),940A I(T),TO-200AC
Manufacturer
Vishay
Datasheet
1.ST733C08LFL0.pdf
(9 pages)
Specifications of ST733C08LFM0
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
75 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AC
Breakover Current Ibo Max
20950 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST733CLPbF Series
Vishay High Power Products
www.vishay.com
6
1E5
1E4
1E3
1E2
1E5
1E4
1E3
1E2
1E1
Fig. 11 - Reverse Recovered Charge Characteristics
1E1
Snubber circu it
R = 10 oh ms
C = 0.47 µF
V = 80% V
450
400
350
300
250
200
150
100
s
s
D
50
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
0
10 20 30 40 50 60 70 80 90 100
5000
S T 733C..L S eries
T = 125 °C
J
DRM
5000
3000
3000
2500
1E2
2500
1E 2
Pulse Basewid th (µs)
2000
1500
Pulse Basewidth (µs)
1500
1000
1000
I
500
T M
For technical questions, contact: ind-modules@vishay.com
400
tp
= 1500 A
1E3
1E3
400
1000 A
500 A
200
ST733C ..L Series
Trapez oidal pu lse
T = 40°C
di/ dt = 50A/ µ s
200
C
S T 733C..L S eries
S inusoidal pulse
T = 40°C
S nubber circuit
R = 10 ohms
C
V = 80% V
C
(Hockey PUK Version), 940 A
100
s
s
D
100
= 0.47 µF
Inverter Grade Thyristors
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
50 Hz
50 Hz
DRM
1E4
1E4
1E 1
1E1
Fig. 12 - Reverse Recovered Current Characteristics
1E 1
Snu bber circu it
R = 10 oh ms
C = 0.47 µF
V = 80% V
s
s
D
250
200
150
100
50
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
0
10 20 30 40 50 60 70 80 90 100
5000
DRM
3000
3000
2500
2500
1E2
1E2
Pulse Basewidth (µs)
2000
Pulse Basewidth (µs)
1500
1500
1000
1000
S T 733C..L S eries
T = 125 °C
500
J
Document Number: 94378
tp
400
tp
1E3
400
1E3
I
T M
Revision: 11-Aug-08
200
= 1500 A
ST733C ..L Series
Trapez oidal pu lse
T = 55°C
di/ dt = 50A/ µ s
S nub ber circ uit
R = 10 ohms
C
V = 80% V
200
S T 733C..L S eries
S inusoida l pulse
T = 55°C
C
1000 A
C
500 A
s
s
D
= 0.47 µF
100
100
50 Hz
50 Hz
DRM
1E4
1E4