SUM47N10-24L-E3 Vishay, SUM47N10-24L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM47N10-24L-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,47A I(D),TO-263
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM47N10-24L-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUM47N10-24L-E3; SUM47N10-24L-E3TR

SUM47N10-24L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.01
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
2
1
0
- 50 - 25
0
10 -
http://www.vishay.com/ppg?72827.
0.1
0.2
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
4
V
I
D
GS
Maximum Avalanche Drain Current
25
= 40 A
Single Pulse
= 10 V
0.05
0
T
J
T
vs. Case Temperature
50
0.02
C
- Junction Temperature (°C)
25
- Case Temperature (°C)
75
50
10 -
3
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10 -
2
175
175
Square Wave Pulse Duration (s)
10 -
1
100
100
0.1
10
10
1
1
0.1
0
Limited by r
* V
GS
Source-Drain Diode Forward Voltage
V
V
minimum V
DS(on) *
0.3
DS
SD
1
T
Single Pulse
T
J
- Drain-to-Source Voltage (V)
Safe Operating Area
- Source-to-Drain Voltage (V)
C
1
= 175 °C
= 25 °C
GS
at which r
10
0.6
S-80272-Rev. C, 11-Feb-08
Document Number: 72827
DS(on)
100
10
0.9
T
is specified
10 µs
100 µs
1 ms
10 ms
100 ms, DC
J
= 25 °C
1000
30
1.2