SUP60N06-12P-E3 Vishay, SUP60N06-12P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP60N06-12P-E3
• Description: N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SUP60N06-12P-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 3250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP60N06-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.0
1.7
1.4
1.1
0.8
0.5
74
70
66
62
- 50
- 50
Drain-Source Breakdown vs. Junction Temperature
On-Resistance vs. Junction Temperature
I
- 25
I
- 25
D
D
= 15 A
= 1 mA
0
T
0
J
- Junction Temperature (°C)
T
J
25
V
25
- Temperature (°C)
GS
= 10 V
50
50
75
75
75
60
45
30
15
0
0
Maximum Drain Current vs. Case Temperature
Package Limited
100
100
25
125
125
T
C
150
150
50
- Case Temperature (°C)
75
100
0.001
- 0.4
- 0.8
- 1.2
- 1.6
0.01
100
0.8
0.4
0.0
0.1
10
1
- 50
0.0
125
- 25
Source-Drain Diode Forward Voltage
0.2
150
V
SD
T
0
J
- Source-to-Drain Voltage (V)
= 150 °C
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
S10-1475-Rev. C, 05-Jul-10
Document Number: 69070
I
D
75
= 250 µA
0.8
T
J
100
= - 50 °C
T
J
I
1.0
D
= 25 °C
= 1 mA
125
1.2
150