TSHG5410 Vishay, TSHG5410 Datasheet
TSHG5410
Specifications of TSHG5410
Related parts for TSHG5410
TSHG5410 Summary of contents
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... High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero DESCRIPTION TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSHG5410 90 Note Test conditions see table “Basic Characteristics” ...
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... TSHG5410 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... P 1000 21355 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com TSHG5410 Vishay Semiconductors 1000 100 100 1000 I - Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.25 1.0 0.75 0.5 ...
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... TSHG5410 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 Drawing-No.: 6.544-5258.11-4 Issue: 2; 19.05.09 21797 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero C 1.1 ± 0.25 2.54 nom. emittertechsupport@vishay.com R2.49 (sphere) Area not plane Ø 5 ± 0.15 technical drawings + 0 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...