VSKEL240-08S10 Vishay, VSKEL240-08S10 Datasheet - Page 7

• Manufacturer Part Number: VSKEL240-08S10
• Description: 800V Fast Recovery Diode MAGN-A-Pak
• Manufacturer: Vishay

Specifications of VSKEL240-08S10

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93164
Revision: 16-Jul-10
1E 5
1E 4
1E 3
1E 2
1E 1
1E 0
1E5
1E4
1E3
1E2
Fig. 19 - Reverse Recovery Charge Characteristics
1E 1
1E 1
500
450
400
350
300
250
200
150
100
50
R ate Of Fall Of Forward Current - di/ dt (A/ µs)
0
0
20000
tp
tp
0.01
10000
0.02
VSK.L240..S 10/ S 20
T = 90 °C
VSK.L240..S 10/ S 20
S inus oidal P uls e
T = 150 °C
S inusoidal Pulse
50
J
C
0.04
0.1
5000
1E 2
1E2
Pulse Basewidth (µs)
Pulse B asewidth (µs)
0.2
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VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
For technical questions within your region, please contact one of the following:
VSK.L240..S 30 S eries
T = 150 °C
0.4
2500
I
100
J
FM
1
= 1000A
2
1500
4
10
Fig. 21 - Maximum Forward Energy Power Loss Characteristics
1000
20 joules per pulse
500A
150
1E 3
1E 3
100A
400
(MAGN-A-PAK Power Modules)
Fast Recovery Diodes, 250 A
200
200
Fig. 22 - Frequency Characteristics
50 Hz
1E 4
1E4
1E 4
1E4
1E 1
Fig. 20 - Reverse Recovery Current Characteristics
E 1
1E 1
1E 1
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300
250
200
150
100
50
R ate Of F all Of Forward Current - di/ dt (A/ µs)
0
20000
tp
0
tp
0.01
10000
VSK.L240..S 10/ S 20
T rapezoidal Pulse
T = 150 °C
VSK.L240..S 10/ S 20
S inusoidal Pulse
T = 100 °C
0.02
J
C
50
0.04
5000
1E 2
1E 2
Vishay Semiconductors
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.1
0.2
2500
0.4
100
I
VSK.L240..S 30 S eries
T = 150 °C
1
FM
1500
J
2
= 1000A
4
10
1000
20 joules per pulse
150
1E3
1E 3
500A
400
100A
200
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200
50 Hz
1E 4
1E 4
7