VSKEL240-12S20 Vishay, VSKEL240-12S20 Datasheet - Page 7

1200V Fast Recovery Diode MAGN-A-Pak

VSKEL240-12S20

Manufacturer Part Number
VSKEL240-12S20
Description
1200V Fast Recovery Diode MAGN-A-Pak
Manufacturer
Vishay
Datasheet

Specifications of VSKEL240-12S20

Voltage - Forward (vf) (max) @ If
1.57V @ 800A
Current - Reverse Leakage @ Vr
50mA @ 1200V
Current - Average Rectified (io) (per Diode)
250A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
2µs
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
Single
Mounting Type
Chassis Mount
Package / Case
3-MAGN-A-PAK™
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
1.57 V at 800 A
Recovery Time
2000 ns
Forward Continuous Current
250 A
Max Surge Current
8400 A
Reverse Current Ir
50000 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRKEL240-12S20
IRKEL240-12S20
IRKEL240-12S20
Document Number: 93164
Revision: 16-Jul-10
1E 5
1E 4
1E 3
1E 2
1E 1
1E 0
1E5
1E4
1E3
1E2
Fig. 19 - Reverse Recovery Charge Characteristics
1E 1
1E 1
500
450
400
350
300
250
200
150
100
50
R ate Of Fall Of Forward Current - di/ dt (A/ µs)
0
0
20000
tp
tp
0.01
10000
0.02
VSK.L240..S 10/ S 20
T = 90 °C
VSK.L240..S 10/ S 20
S inus oidal P uls e
T = 150 °C
S inusoidal Pulse
50
J
C
0.04
0.1
5000
1E 2
1E2
Pulse Basewidth (µs)
Pulse B asewidth (µs)
0.2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
For technical questions within your region, please contact one of the following:
VSK.L240..S 30 S eries
T = 150 °C
0.4
2500
I
100
J
FM
1
= 1000A
2
1500
4
10
Fig. 21 - Maximum Forward Energy Power Loss Characteristics
1000
20 joules per pulse
500A
150
1E 3
1E 3
100A
400
(MAGN-A-PAK Power Modules)
Fast Recovery Diodes, 250 A
200
200
Fig. 22 - Frequency Characteristics
50 Hz
1E 4
1E4
1E 4
1E4
1E 1
Fig. 20 - Reverse Recovery Current Characteristics
E 1
1E 1
1E 1
DiodesEurope@vishay.com
300
250
200
150
100
50
R ate Of F all Of Forward Current - di/ dt (A/ µs)
0
20000
tp
0
tp
0.01
10000
VSK.L240..S 10/ S 20
T rapezoidal Pulse
T = 150 °C
VSK.L240..S 10/ S 20
S inusoidal Pulse
T = 100 °C
0.02
J
C
50
0.04
5000
1E 2
1E 2
Vishay Semiconductors
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.1
0.2
2500
0.4
100
I
VSK.L240..S 30 S eries
T = 150 °C
1
FM
1500
J
2
= 1000A
4
10
1000
20 joules per pulse
150
1E3
1E 3
500A
400
100A
200
www.vishay.com
200
50 Hz
1E 4
1E 4
7

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