TSFF5410 Vishay, TSFF5410 Datasheet - Page 3

• Manufacturer Part Number: TSFF5410
• Description: IR EMITTER, 870NM, T-1 3/4, THROUGH HOLE
• Manufacturer: Vishay

Specifications of TSFF5410

• Peak Wavelength: 870nm
• Forward Current If(av): 100mA
• Rise Time: 15ns
• Fall Time Tf: 15ns
• Radiant Intensity: 70mW/Sr
• Supply Voltage Range: 1.5V
• Viewing Angle: 22°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 40mW/sr @ 100mA
• Wavelength: 870nm
• Voltage - Forward (vf) Typ: 1.5V
• Orientation: Top View
• Mounting Type: Through Hole
• Package / Case: Radial, 5mm Dia (T 1 3/4)
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Lens Shape: Circular
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1208

BASIC CHARACTERISTICS
T
Document Number: 81091
Rev. 1.7, 29-Jun-09
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
18220
18873
16031
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.01
0
1
I
V
F
F
0.1
- Forward Current (mA)
1
t
- Forward Voltage (V)
P
10
- Pulse Duration (ms)
t
P
/T = 0.01
1
2
For technical questions, contact:
t
100
t
P
P
/T = 0.001
0.02
= 100 µs
0.05
High Speed Infrared Emitting Diode,
T
0.2
0.5
10
amb
3
870 nm, GaAlAs Double Hetero
< 50 °C
0.1
1000
100
4
[e-mail]
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
94 8883
Fig. 6 - Relative Radiant Power vs. Wavelength
95 9886
14256
1.25
0.75
0.25
1.0
0.9
0.8
0.7
1.0
0.5
- 1
- 2
- 3
- 4
- 5
0
1
0
780
10
Fig. 8 - Attenuation vs. Frequency
0.6
1
I
FAC
I
0.4
FDC
= 30 mA pp
10
Vishay Semiconductors
f - Frequency (kHz)
= 70 mA
2
λ - Wavelength (nm)
0.2
10
880
0°
0
3
10°
10
TSFF5410
4
20°
www.vishay.com
980
10
30°
40°
50°
60°
70°
80°
5
3