ILQ2-X009 Vishay, ILQ2-X009 Datasheet - Page 4

• Manufacturer Part Number: ILQ2-X009
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of ILQ2-X009

• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: SMD
• No. Of Pins: 16
• Peak Reflow Compatible (260 C): No
• Isolation Voltage: 5.3kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 4
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 500 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 400 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP SMD
• Number Of Elements: 4
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.65V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP SMD
• Collector Current (dc) (max): 400mA
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 16
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). These optocouplers are suitable for “safety electrical insulation” only within the
Rev. 1.8, 28-Jun-11
SAFETY AND INSULATION RATINGS
PARAMETER
Isolation test voltage
between emitter and detector
Isolation resistance
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
Rated impulse voltage
Maximum working voltage
Forward current
Power dissipation
Safety temperature
Creepage distance
Clearance distance
Insulation distance
safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
450
400
350
300
250
200
150
100
50
0
0
www.vishay.com
T
25
Fig. 1 - Derating Diagram
SI
IR-diode
I
SI
- Safety Temperature (°C)
(mA)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
50
75
Phototransistor
P
SO
(mW)
100 125 150 175
V
V
IO
Recurring peak voltage
per IEC 60950 2.10.5.1
IO
For technical questions, contact:
= 500 V, T
TEST CONDITION
= 500 V, T
amb
amb
= 100 °C
= 25 °C
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
4
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SYMBOL
V
V
V
P
CTI
R
IOTM
IORM
T
I
ISO
SI
SO
IO
SI
13930
Fig. 2 - Test Pulse Diagram for Sample Test according
V
V
V
IOWM
IOTM
IORM
to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
V
pd
0
www.vishay.com/doc?91000
MIN.
5300
10
10
175
7.0
7.0
0.4
t
1
12
11
Vishay Semiconductors
55/100/21
t
t
t
1
3
stres
t
, t
test
, t
TYP.
2
4
t
Tr
= 1 s to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
Document Number: 83646
MAX.
890
275
400
175
10
t
2
t
3
t
t
stres
test
t
t
UNIT
V
4
mW
mm
mm
mm
mA
RMS
kV
°C

V